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参数资料
| 型号： | 2SK2111 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/6页 |
| 文件大小： | 58K |
| 代理商： | 2SK2111 |
2SK2111
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = 60 V, VGS = 0
1.0
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0
±10
A
Gate Cut-Off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
0.8
1.4
2.0
V
Forward Transfer Admittance
|yfs|VDS = 10 V, ID = 0.5 A
0.4
S
Drain to Source On-State Resistance
RDS(on)1
VGS = 4.0 V, ID =0.5 A
0.32
0.6
Drain to Source On-State Resistance
RDS(on)2
VGS = 10 V, ID = 0.5 A
0.24
0.45
Input Capacitance
Ciss
VDS = 10 V, VGS = 0,
170
pF
Output Capacitance
Coss
f = 1.0 MHz
87
pF
Reverse Transfer Capacitance
Crss
32
pF
Turn-On Delay Time
td(on)
VDD = 25 V, ID = 0.5 A
2.8
ns
Rise Time
tr
VGS(on) = 10 V, RG = 10
2.3
ns
Turn-Off Delay Time
td(off)
RL = 50
55
ns
Fall Time
tf
27
ns
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2111-AZ | 1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2112 | 1 A, 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2112-AZ | 1 A, 100 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2115 | 1.5 ohm, POWER, FET |
| 2SK2118 | 1.5 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2111-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,1.0A,0.32ohm,P-MINI MOLD3 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 1A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2112 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK2112-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2112-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2113 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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