参数资料
型号: 2SK2115
元件分类: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220CFM, 3 PIN
文件页数: 5/8页
文件大小: 48K
代理商: 2SK2115
2SK2114, 2SK2115
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK2114
V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
breakdown
voltage
2SK2115
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±25 V, VDS = 0
Zero gate
2SK2114
I
DSS
250
A
V
DS = 360 V, VGS = 0
voltage drain
current
2SK2115
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to
2SK2114
R
DS(on)
1.0
1.4
I
D = 2.5 A, VGS = 10 V*
1
source on state
resistance
2SK2115
1.2
1.5
Forward transfer admittance
|y
fs|
2.5
4.0
S
I
D = 2.5 A
V
DS = 10 V*
1
Input capacitance
Ciss
640
pF
V
DS = 10 V
Output capacitance
Coss
160
pF
V
GS = 0
Reverse transfer capacitance
Crss
20
pF
f = 1 MHz
Turn-on delay time
t
d(on)
10
ns
I
D = 2.5 A
Rise time
t
r
25
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
50
ns
R
L = 12
Fall time
t
f
—30—ns
Body to drain diode forward
voltage
V
DF
0.95
V
I
F = 5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
300
ns
I
F = 5 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristics curve of 2SK1155, 2SK1156.
相关PDF资料
PDF描述
2SK2127 8 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E
2SK2131 15 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2133-AZ 16 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2133 16 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2134-Z 13 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
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