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参数资料
| 型号： | 2SK2121 |
| 元件分类： | JFETs |
| 英文描述： | 0.016 ohm, POWER, FET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 63K |
| 代理商： | 2SK2121 |
2SK2121
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.25
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.007
0.01
I
D = 25 A
V
GS = 10 V*
1
—
0.009
0.016
I
D = 25 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
4065—
S
I
D = 25 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
8330
—
pF
V
DS = 10 V
V
GS = 0
f = 1 MHz
Output capacitance
Coss
—
3500
—
pF
Reverse transfer capacitance
Crss
—
550
—
pF
Turn-on delay time
t
d(on)
—50
—
ns
I
D = 25 A
V
GS = 10 V
R
L = 1.2
Rise time
t
r
—
270
—
ns
Turn-off delay time
t
d(off)
—
1400
—
ns
Fall time
t
f
—
560
—
ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
150
—
ns
I
F = 50 A, VGS = 0,
diF / dt = 50 A /
s
Note
1. Pulse Test
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PDF描述 |
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| 2SK2157 | 5 A, 30 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2158A-T1B-AT | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2122 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2123 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2124 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2125 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2126 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
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