参数资料
型号: 2SK2159-T1-AZ
元件分类: 小信号晶体管
英文描述: 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 4/6页
文件大小: 62K
代理商: 2SK2159-T1-AZ
2SK2159
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
0.001
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
10
1
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Source
to
Drain
Current
-
A
0.001
0.2
0.6
0.8
1.2
1.4
0.01
1
10
TA = 75
°C
25
°C
–25
°C
20
50
100
200
500
1 000
2
5
10
20
50
100
Ciss
Coss
Crss
10
20
50
100
200
500
1 000
0.2
0.5
1
2
5
10
0.1
tr
td(off)
tf
td(on)
VDD = 25 V
VGS(on) = 3 V
RG = 10
0.01
0.1
1
10
0.4
0.6
0.8
1.0
1.2
VGS = 2.5 V
VGS = 0
f = 1 MHz
1.0
0.4
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
0.2
0.4
0.6
0.8
1
4
6
12
14
ID = 2 A
0
0.001
0.2
0.6
0.8
1.2
1.4
0.01
1
10
TA = 75
°C
25
°C
–25
°C
VGS = 4.0 V
1.0
0.4
0.1
ID = 1 A
28
10
相关PDF资料
PDF描述
2SK2159 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2175 15 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2175 15 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2177 1 A, 500 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2196 20 A, 500 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
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