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参数资料
| 型号： | 2SK2159 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PACKAGE-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 172K |
| 代理商： | 2SK2159 |
2SK2159
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = 60 V, VGS = 0
1.0
A
Gate Leakage Current
IGSS
VGS =
±14 V, VDS = 0
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
0.5
0.9
1.1
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 1.0 A
0.4
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 1.5 V, ID = 0.1 A
0.55
0.7
Drain to Source On-state Resistance
RDS(on)2
VGS = 2.5 V, ID = 1.0 A
0.27
0.5
Drain to Source On-state Resistance
RDS(on)3
VGS = 4.0 V, ID = 1.0 A
0.22
0.3
Input Capacitance
Ciss
VDS = 10 V, VGS = 0,
319
pF
Output Capacitance
Coss
f = 1.0 MHz
109
pF
Reverse Transfer Capacitance
Crss
22
pF
Turn-On Delay Time
td(on)
VDD = 25 V, ID = 1.0 A
38
ns
Rise Time
tr
VGS(on) = 3 V, RG = 10
128
ns
Turn-Off Delay Time
td(off)
RL = 25
237
ns
Fall Time
tf
130
ns
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2159-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2159-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2159-T1(AZ) | 制造商:Renesas Electronics 功能描述:60V(Max) 60A(Max) 0.0087@10V(Max) TO252-3 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2159-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2159-T2-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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