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参数资料
| 型号： | 2SK2201(2-7J1B) |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 444K |
| 代理商： | 2SK2201(2-7J1B) |
2SK2201
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2201
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.28 (typ.)
High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
3
A
Drain current
Pulse (Note 1)
IDP
12
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
140
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 , IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相关代理商/技术参数 |
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| 2SK2202 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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