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参数资料
| 型号： | 2SK2212-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-67, TO-220FM, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 934K |
| 代理商： | 2SK2212-E |
2SK2212
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
1.0
0.8
0.6
0.4
0.2
–40
0
40
80
120
160
0
ID = 10 A
VGS = 10 V
Pulse Test
2 A
5 A
0.1
0.3
1
3
10
30
100
10
2
5
1
0.1
0.2
0.5
25
°C
Tc = –25
°C
75
°C
VDS = 10 V
Pulse Test
500
200
100
20
50
10
5
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
0.2
0.5
1
2
5
10
20
0
10
20
30
40
50
5000
1000
100
10
5
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
500
400
300
200
100
0
20
16
12
8
4
0
VDD = 50 V
100 V
150 V
VGS
VDS
ID = 15 A
VDD = 150 V
100 V
50 V
8
16
24
32
40
5
500
200
100
20
50
10
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
0.2
0.5
1
2
5
10
20
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| 2SK2219-22 | 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2219TL | 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2213-01 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2213-01L | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2213-01S | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2215-01 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2215-01L | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
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