- 您现在的位置：买卖IC网 > PDF目录49997 > 2SK2217 RF POWER, FET PDF资料下载
参数资料
| 型号： | 2SK2217 |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER, FET |
| 封装： | RFPAK-2 |
| 文件页数： | 2/8页 |
| 文件大小： | 46K |
| 代理商： | 2SK2217 |
2SK2217
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
10
A
Channel dissipation
Pch*
1
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (T
C = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain leakage current
I
DSS
—
1
mA
V
DS = 60 V, VGS = 0
Gate leakage current
I
GSS
—
± 3
A
V
GS = ±10 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
0.3
—
1.6
V
DS = 10 V, ID = 1 mA
Drain to source voltage
V
DS(on)
—
1.2
2.5
V
GS = 10 V, ID = 5 A*
1
Forward transfer admittance
|y
fs|
3.0
4.0
—
S
V
DS = 10 V, ID = 5 A*
1
Input capacitance
Ciss
—
250
—
pF
V
GS = 5 V, VDS = 0
f = 1MHz
Output capacitance
Coss
—
85
—
pF
V
DS = 10V, VGS = 0
f = 1MHz
Output power
P
OUT
40
60
—
W
V
DS = 28 V, IDO = 0.2 A
Drain efficiency
ηD
—
55
—
%
f = 860 MHz, Pin = 6 W
Note:
1. Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2234 | 8 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2294 | 3 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2315TYTR-E | 2 A, 60 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2325 | 3 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E |
| 2SK2328 | 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2218 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amp Applications |
| 2SK2218-3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR|JFET|N-CHANNEL|40MA I(DSS)|SOT-89 |
| 2SK2218-4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR|JFET|N-CHANNEL|48MA I(DSS)|SOT-89 |
| 2SK2218-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR|JFET|N-CHANNEL|57MA I(DSS)|SOT-89 |
| 2SK2219 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Capacitor Microphone Applications |
发布紧急采购，3分钟左右您将得到回复。