参数资料
型号: 2SK2267
元件分类: JFETs
英文描述: 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-21F1B, 3 PIN
文件页数: 1/6页
文件大小: 422K
代理商: 2SK2267
2SK2267
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2267
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 8 m (typ.)
High forward transfer admittance
: |Yfs| = 60 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
60
A
Drain current
Pulse (Note 1)
IDP
240
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
1054
mJ
Avalanche current
IAR
60
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 398 H, RG = 25 , IAR = 60 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
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