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参数资料
| 型号： | 2SK2315TYTR-E |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 60 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SC-62, UPAK-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 166K |
| 代理商： | 2SK2315TYTR-E |
Data Sheet D14856EJ2V0DS
2
2SA1129
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
30 V, IE = 0 A
10
A
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0 A
10
A
DC current gain
hFE1
VCE =
1.0 V, IC = 3.0 ANote
40
200
DC current gain
hFE2
VCE =
1.0 V, IC = 5.0 ANote
20
Collector saturation voltage
VCE(sat)1
IC =
3.0 A, IB = 0.1 ANote
0.3
V
Collector saturation voltage
VCE(sat)2
IC =
5.0 A, IB = 0.5 ANote
0.6
V
Base saturation voltage
VBE(sat)1
IC =
3.0 A, IB = 0.1 ANote
1.5
V
Base saturation voltage
VBE(sat)2
IC =
5.0 A, IB = 0.5 ANote
2.0
V
Turn-on time
ton
1.0
s
Storage time
tstg
2.5
s
Fall time
tf
IC =
5.0 A, RL = 4.0 ,
IB1 =
IB2 = 0.5 A, VCC 20 V
PW = 50
s, duty cycle = 2%
1.0
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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相关代理商/技术参数 |
参数描述 |
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| 2SK2316 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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| 2SK2318 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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