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参数资料
| 型号： | 2SK2328 |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 47K |
| 代理商： | 2SK2328 |
2SK2328
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
650
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 550 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
1.0
1.4
I
D = 4A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
4.0
6.5
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1180
—
pF
V
DS = 10 V
Output capacitance
Coss
—
265
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
50
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 4 A
Rise time
t
r
—
50
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
105
—
ns
R
L = 7.5
Fall time
t
f
—45—ns
Body-drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 7 A, VGS = 0
Body-drain diode reverse
recovery time
t
rr
—
420
—
ns
I
F = 7 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristic curves of 2SK1403A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2334(L) | 0.07 ohm, POWER, FET |
| 2SK2334LL | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2334LL | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2334SS | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2360-Z | 7 A, 500 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2328-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2329 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2329-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2329L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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