参数资料
型号: 2SK2361-A
元件分类: JFETs
英文描述: 10 A, 450 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-88, 3 PIN
文件页数: 1/8页
文件大小: 115K
代理商: 2SK2361-A
MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2361: RDS (on) = 0.9
(VGS = 10 V, ID = 5.0 A)
2SK2362: RDS (on) = 1.0
(VGS = 10 V, ID = 5.0 A)
Low Ciss
Ciss = 1050 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (2SK2361/2SK2362)
VDSS
450/500
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse)
±40
A
Total Power Dissipation (Tc = 25 C)
PT1
100
W
Total Power Dissipation (TA = 25 C)
PT2
3.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
142
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19
MIN.
20.0±0.2
3.0±0.2
4.5±0.2
Body
Diode
Source
Drain
Gate
1995
DATA SHEET
相关PDF资料
PDF描述
2SK2362-A 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2362 10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2364 8 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2SK2363 8 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2SK2363-AZ 8 A, 450 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
相关代理商/技术参数
参数描述
2SK2362 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2362K 制造商:未知厂家 制造商全称:未知厂家 功能描述:
2SK2363 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2363(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SK2364 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE