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参数资料
| 型号： | 2SK2379 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 200 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 26K |
| 代理商： | 2SK2379 |
2SK2379
No.5374-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Micalless package facilitaing mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
200
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
20
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
80
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
200
V
Gate-to-Source Breakdown Voltage
V(BR)GSS
IG=±100A, VDS=0
±20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=200V, VGS=0
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
2.5
V
Forward Transfer Admittance
|yfs|
VDS=10V, ID=10A
9.5
16
S
Marking : K2379
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN5374C
2SK2379
Package Dimensions
unit : mm
2063A
[2SK2379]
22004 TS IM TA-100390 / D2002 TS IM / D2500 TS IM TA-3128
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
1.6
1.2
0.75
14.0
16.0
10.0
18.1
5.6
3.2
7.2
3.5
2.55
2.4
4.5
2.8
0.7
2.55
2.4
1
23
Ultrahigh-Speed Switching Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2399(2-7B2B) | 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2406TP-A | 1000 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2406TP-A | 1000 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2411 | 30 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2412-AZ | 20 A, 60 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2380 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK23800QL | 功能描述:JFET LOW FREQ.IMPEDANCE CONVRT RoHS:否 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK2381 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2381(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SK2381(F,T) | 功能描述:MOSFET MOSFET N-Ch 200V 5A Rdson 0.8 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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