参数资料
型号: 2SK2400
元件分类: JFETs
英文描述: 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-8M1B, 3 PIN
文件页数: 1/6页
文件大小: 378K
代理商: 2SK2400
2SK2400
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2400
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 17 (typ.)
High forward transfer admittance
: |Yfs| = 4.5 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation
PD
1.3
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
0.13
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
相关PDF资料
PDF描述
2SK2406 Si, SMALL SIGNAL, FET
2SK2414-Z-E2 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2415-AZ 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB
2SK2423 0.7 ohm, POWER, FET
2SK2425 0.55 ohm, POWER, FET
相关代理商/技术参数
参数描述
2SK2400_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2400_09 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive
2SK2400TP 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 100V 5A 3PIN TPS - Tape and Reel
2SK2401 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2401(Q) 制造商:Toshiba 功能描述:transistor