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参数资料
| 型号： | 2SK2411-Z |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 86K |
| 代理商： | 2SK2411-Z |
1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed
for high speed switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 40 m
MAX. (@ VGS = 10 V, ID = 15 A)
RDS(on)2 = 60 m
MAX. (@ VGS = 4 V, ID = 15 A)
Low Ciss
Ciss = 1500 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±30
A
Drain Current (pulse)*
ID(pulse)
±120
A
Total Power Dissipation (Tc = 25 C)
PT1
75
W
Total Power Dissipation (TA = 25 C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current**
IAS
30
A
Single Avalanche Energy**
EAS
90
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2411, 2SK2411-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
The information in this document is subject to change without notice.
Document No. D13398EJ1V0DS00 (1st edition)
(Previous No. TC-2492)
Date Published March 1998 N CP(K)
Printed in Japan
10.0
3.6 ±0.2
1.4 ±0.2
2.8
±0.2
MP-25 (TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
MP-25Z(SURFACE MOUNT TYPE)
4
1.3 ±0.2
10.6 MAX.
0.75 ±0.1
2.54
3.0
±0.3
4
(10.0)
4.8 MAX.
1.3 ±0.2
0.5 ±0.2
8.5
±0.2
1.0
±
0.5
1.5
MAX.
1.1
±0.4
3.0
±0.5
(0.5R)
(0.8R)
(2.54)
1.0 ±0.3
12 3
5.9
MIN.
15.5
MAX.
12.7
MIN.
6.0
MAX.
2.54
1 2 3
0.5 ±0.2
2.8 ±0.2
1.3 ±0.2
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
PACKAGE DIMENSIONS
(in millimeter)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2411 | 30 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2415-Z | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK2415 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK2415 | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK2415-Z | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2412 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2412-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 20A 70m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-220 Isolated |
| 2SK2413 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2413-T-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 10A 70m@10V MP10 Bulk |
| 2SK2414 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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