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参数资料
| 型号： | 2SK2415 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 封装： | MP-3, TO-251, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 145K |
| 代理商： | 2SK2415 |
1994
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415,2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
Description
The 2SK2415 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
Features
Low on-state resistance
RDS(on)1 = 0.10 MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 MAX. (VGS = 4 V, ID = 4.0 A)
Low Ciss: Ciss = 570 pF TYP.
QUALITY GRADE
Standard
Please refer to "Quality Grades On NEC Semiconductor Devices" (Document
number: C11531E) published by NEC Corporation to know the specification
of quality grade on the devices and its recommended applica5tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±8.0
A
Drain Current (pulse)Note 1
ID(pulse)
±32
A
Total Power Dissipation (TC = 25C)
PT1
20
W
Total Power Dissipation (TA = 25C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche CurrentNote 2
IAS
8.0
A
Single Avalanche EnergyNote 2
EAS
6.4
mJ
Note 1 PW ≤ 10 s, Duty Cycle ≤ 1%
2 Starting Tch = 25°C, RG = 25 , VGS = 20 → 0 V
PACKAGE DRAWINGS
(Unit : mm)
TO-251 (MP-3)
1994
The mark
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13207EJ2V0DS00 (2nd edition)
Date Published August 2004 N CP(K)
Printed in Japan
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±
0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±
0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
12
3
4
6.5 ±0.2
5.0 ±0.2
4.3
MAX.
0.8
2.3 2.3
0.9
MAX.
5.5
±
0.2
10.0
MAX.
2.0 MIN.
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
0.8
MAX.
0.8
1.0
MIN.
1.8TYP.
0.7
1.1 ±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2935 | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939S-E | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2939S | 35 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3136 | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3212 | 10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2415-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-251 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(3+Tab) TO-251 |
| 2SK2415Z | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252 |
| 2SK2415-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2415-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(2+Tab) TO-252 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(2+Tab) TO-252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 8A 3-Pin(2+Tab) TO-252 |
| 2SK2417 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220(NIS) - Rail/Tube |
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