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参数资料
| 型号： | 2SK2425 |
| 元件分类： | JFETs |
| 英文描述： | 0.55 ohm, POWER, FET |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 27K |
| 代理商： | 2SK2425 |
2SK2425
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS =250 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.4
0.55
I
D = 4 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
3.0
5.0
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
690
—
pF
V
DS = 10 V
Output capacitance
Coss
—
265
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
45
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
13
—
ns
I
D = 4 A
Rise time
t
r
—
55
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
65
—
ns
R
L = 7.5
Fall time
t
f
—37—ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 7 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
180
—
ns
I
F = 7 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristics curves of 2SK1667, 2SK1668.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK242-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SOT-23 |
| 2SK2425-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2426 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2427 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SOT-186 |
| 2SK2428 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | SOT-186 |
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