- 您现在的位置：买卖IC网 > PDF目录33490 > 2SK2445 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK2445 |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 757K |
| 代理商： | 2SK2445 |
2SK2445
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2445
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 14 m (typ.)
High forward transfer admittance
: |Yfs| = 40 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
50
A
Drain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
683
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 371 μH, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK246-Y | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK246-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK2462 | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2467-Y | 9 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2477 | 10 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2445_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK2446 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2446-01L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SK2446-01S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252VAR |
| 2SK2446-L | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
发布紧急采购，3分钟左右您将得到回复。