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参数资料
| 型号： | 2SK2462 |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 114K |
| 代理商： | 2SK2462 |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 0.14
MAX. (@ VGS = 10 V, ID = 8.0 A)
RDS(on)2 = 0.17
MAX. (@ VGS = 4 V, ID = 8.0 A)
Low Ciss
Ciss = 790 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±15
A
Drain Current (pulse)*
ID(pulse)
±60
A
Total Power Dissipation (Tc = 25 C)
PT1
30
W
Total Power Dissipation (TA = 25 C) PT2
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Single Avalanche Current**
IAS
15
A
Single Avalanche Energy**
EAS
22.5
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2462
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10031EJ1V0DS00
Date Published May 1995 P
Printed in Japan
1995
DATA SHEET
Drain
Source
Body
Diode
Gate
Gate Protection
Diode
MP-45F(ISOLATED TO-220)
10.0 ±0.3
3.2 ±0.2
4.5 ±0.2
2.7 ±0.2
15.0
±0.3
3
±0.1
12.0
±0.2
13.5
MIN.
4
±0.2
1.3 ±0.2
1.5 ±0.2
2.54
0.7 ±0.1
0.65 ±0.1
2.5 ±0.1
12 3
1. Gate
2. Drain
3. Source
PACKAGE DIMENSIONS
(in millimeters)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is
externally required if a voltage exceeding rated voltage may
be applied to this device.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2462-AZ | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2467-Y | 9 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2476 | 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2480 | 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2482 | 5 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2462-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK2463 | 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (60V, 2A) |
| 2SK2463T100 | 功能描述:MOSFET TRANS MOSFET N-CH 60V 2A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2464 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK2464-TL-E | 制造商:SANYO 功能描述:Nch 30V 45A 0.012 yo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH30V45AZP 制造商:Sanyo 功能描述:0 |
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