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参数资料
| 型号： | 2SK2480-AZ |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 117K |
| 代理商： | 2SK2480-AZ |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2480 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
RDS (on) = 4.0
(VGS = 10 V, ID = 2.0 A)
Low Ciss
Ciss = 900 pF TYP.
High Avalanche Capability Ratings
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±3.0
A
Drain Current (pulse)*
ID(pulse)
±12
A
Total Power Dissipation (Tc = 25 C)
PT1
35
W
Total Power Dissipation (TA = 25 C)
PT2
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
3.0
A
Single Avalanche Energy**
EAS
37.1
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2480
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
1995
DATA SHEET
Document No. D10272EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
2.5±0.1
1.3±0.2
1.5±0.2
2.54
0.7±0.1
2.54
0.65±0.1
123
3±0.1
4±0.2
15.0±0.3
12.0±0.2
13.5MIN.
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Body
Diode
Source
Drain
Gate
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2481 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2481-AZ | 制造商:Renesas Electronics 功能描述:Nch 900V 4A 4000m@10V TO220AB Bulk |
| 2SK2481-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2482 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2482-A | 制造商:Renesas Electronics 功能描述:Nch 900V 5A 4000m@10V TO3P 制造商:Renesas Electronics 功能描述:Nch 900V 5A 4000m@10V TO3P Bulk |
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