参数资料
型号: 2SK2484
元件分类: JFETs
英文描述: 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-25, 3 PIN
文件页数: 5/10页
文件大小: 208K
代理商: 2SK2484
2SK2484
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
RDS(on)
2.2
2.8
VGS = 10 V, ID = 3.0 A
Gate to Source Cutoff Voltage
VGS(off)
2.5
3.5
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
2.0
VDS = 20 V, ID = 3.0 A
Drain Leakage Current
IDSS
100
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±100
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
1 200
VDS = 10 V
Output Capacitance
Coss
170
VGS = 0
Reverse Transfer Capacitance
Crss
30
f = 1 MHz
Turn-On Delay Time
td(on)
20
ID = 3.0 A
Rise Time
tr
10
VGS = 10 V
Turn-Off Delay Time
td(off)
70
VDD = 150 V
Fall Time
tf
15
RG = 10
Total Gate Charge
QG
40
ID = 5.0 A
Gate to Source Charge
QGS
7
VDD = 450 V
Gate to Drain Charge
QGD
17
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.0
IF = 5.0 A, VGS = 0
Reverse Recovery Time
trr
670
IF = 5.0 A, VGS = 0
Reverse Recovery Charge
Qrr
3.5
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
ns
nC
V
ns
C
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25
50
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1us
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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相关代理商/技术参数
参数描述
2SK2484-Z(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SK2485 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2485(A) 制造商:Renesas Electronics Corporation 功能描述:
2SK2486 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2487 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE