参数资料
型号: 2SK2486
元件分类: JFETs
英文描述: 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-88, 3 PIN
文件页数: 1/8页
文件大小: 132K
代理商: 2SK2486
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2486 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
RDS (on) = 2.0
(VGS = 10 V, ID = 4.0 A)
Low Ciss
Ciss = 1 830 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±7.0
A
Drain Current (pulse)*
ID (pulse)
±18
A
Total Power Dissipation (Tc = 25 C)
PT1
120
W
Total Power Dissipation (TA = 25 C)
PT2
3.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
7.0
A
Single Avalanche Energy**
EAS
144.1
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2486
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10282EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19
MIN.
20.0±0.2
3.0±0.2
4.5±0.2
Body
Diode
Source
Drain
Gate
1995
DATA SHEET
相关PDF资料
PDF描述
2SK2488 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2497 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
2SK2507 25 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2511 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2533 12 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK2487 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2487-A 制造商:Renesas Electronics 功能描述:Nch 900V 8A 1600m@10V TO3P Bulk
2SK2488 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK2488-A 制造商:Renesas Electronics 功能描述:Nch 900V 10A 1200m@10V TO3P Bulk
2SK2489 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:VZ Series Power MOSFET(180V 10A)