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参数资料
| 型号： | 2SK2488-A |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 900 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-88, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 115K |
| 代理商： | 2SK2488-A |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2488 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
RDS (on) = 1.2
(VGS = 10 V, ID = 5.0 A)
Low Ciss
Ciss = 2 900 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse)
±20
A
Total Power Dissipation (Tc = 25 C)
PT1
150
W
Total Power Dissipation (TA = 25 C)
PT2
3.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
10
A
Single Avalanche Energy**
EAS
294
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2488
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10284EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1995
DATA SHEET
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19
MIN.
20.0±0.2
3.0±0.2
4.5±0.2
Body
Diode
Source
Drain
Gate
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| 2SK2508 | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2489 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:VZ Series Power MOSFET(180V 10A) |
| 2SK2489-7100 | 制造商:Shindengen 功能描述: |
| 2SK2489-7102 | 制造商:Shindengen Electric Mfg 功能描述:Cut Tape |
| 2SK2490 | 制造商:SHINDENGEN 制造商全称:Shindengen Electric Mfg.Co.Ltd 功能描述:VZ Series Power MOSFET(180V 10A) |
| 2SK2490-7100 | 制造商:Shindengen Electric Mfg 功能描述:Cut Tape |
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