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参数资料
| 型号： | 2SK2493(2-7B3B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 16 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-7B3B, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 383K |
| 代理商： | 2SK2493(2-7B3B) |
2SK2493
2002-06-24
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
—
±10
A
Drain cutoff current
IDSS
VDS = 16 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.5
—
1.1
V
VGS = 2.5 V, ID = 2.5 A
—
0.08
0.12
Drainsource ON resistance
RDS (ON)
VGS = 4 V, ID = 2.5 A
—
0.07
0.1
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
4.0
8.0
—
S
Input capacitance
Ciss
—
1200
—
Reverse transfer capacitance
Crss
—
110
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
380
—
pF
Rise time
tr
—
30
—
Turnon time
ton
—
50
—
Fall time
tf
—
200
—
Switching time
Turnoff time
toff
—
650
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
23
—
Gatesource charge
Qgs
—
17
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 5 A
—
6
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
120
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 50 A / s
—
0.12
—
C
Marking
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2494-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2495 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2496 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2497 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SK2498 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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