参数资料
型号: 2SK2510
元件分类: JFETs
英文描述: 40 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 5/10页
文件大小: 187K
代理商: 2SK2510
2SK2510
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
RDS (on)1
16
20
VGS = 10 V, ID = 20 A
Drain to Source On-Resistance
RDS (on)2
24
30
VGS = 4 V, ID = 20 A
Gate to Source Cutoff Voltage
VGS (off)
1.0
1.5
2.0
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |13
VDS = 10 V, ID = 20 A
Drain Leakage Current
IDSS
10
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±10
VGS =
±20 V, VDS = 0
Input Capacitance
Ciss
1 600
VDS = 10 V
Output Capacitance
Coss
780
VGS = 0
Reverse Transfer Capacitance
Crss
350
f = 1 MHz
Turn-On Delay Time
td (on)
35
ID = 20 A
Rise Time
tr
380
VGS (on) = 10 V
Turn-Off Delay Time
td (off)
220
VDD = 30 V
Fall Time
tf
300
RG = 10
Total Gate Charge
QG
69
ID = 40 A
Gate to Source Charge
QGS
5.0
VDD = 48 V
Gate to Drain Charge
QGD
26
VGS = 10 V
Body Diode Forward Voltage
VF (S-D)
1.0
IF = 40 A, VGS = 0
Reverse Recovery Time
trr
72
IF = 40 A, VGS = 0
Reverse Recovery Charge
Qrr
130
di/dt = 100 A/
s
UNIT
m
m
V
S
A
pF
ns
nC
V
ns
nC
Test Circuit 2 Gate Charge
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 1 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
VGS
0
t = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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参数描述
2SK2511 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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