参数资料
型号: 2SK2514-A
元件分类: JFETs
英文描述: 50 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-88, 3 PIN
文件页数: 1/7页
文件大小: 111K
代理商: 2SK2514-A
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2514 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super Low On-Resistance
RDS (on)1
≤ 15 m (VGS = 10 V, ID = 25 A)
RDS (on)2
≤ 23 m (VGS = 4 V, ID = 25 A)
Low Ciss
Ciss = 2 100 pF TYP.
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID (DC)
±50
A
Drain Current (pulse)*
ID (pulse)
±200
A
Total Power Dissipation (Tc = 25 C)
PT1
150
W
Total Power Dissipation (TA = 25 C)
PT2
3.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
2SK2514
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10296EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19
MIN.
20.0±0.2
3.0±0.2
4.5±0.2
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
1995
DATA SHEET
相关PDF资料
PDF描述
2SK2514 50 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2553(L) 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2553(S) 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2553(S) 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2553(L) 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
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