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参数资料
| 型号： | 2SK2590 |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 200 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 45K |
| 代理商： | 2SK2590 |
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2593JQ | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2593JP | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2593J | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2595AXTB-E | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2595AXTB | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2590-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2591 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2592 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-262AA |
| 2SK2593 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK2593GQL | 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
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