- 您现在的位置：买卖IC网 > PDF目录49999 > 2SK2593GQ (PANASONIC CORP) 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET PDF资料下载
参数资料
| 型号： | 2SK2593GQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | ROHS COMPLIANT, SSMINI3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 175K |
| 代理商： | 2SK2593GQ |
Silicon Junction FETs (Small Signal)
1
Publication date: May 2008
SJF00064BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK2593G
Silicon N-channel junction FET
For low-frequency amplification
For switching circuits
■ Features
Low noise figure NF
High gate-drain voltage (source open) V
GDO
SSMini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Drain-sourse voltage
VDS
55
V
Gate-drain voltage (Source open)
VGDO
55
V
Gate-source voltage (Drain open)
VGSO
55
V
Drain current
ID
30
mA
Gate current
IG
10
mA
Power dissipation
PD
125
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VGDS
IG = 100 A, VDS = 0
55
V
Drain-source current *
IDSS
VDS
= 10 V, V
GS
= 0
1.0
6.5
mA
Gate-source cutoff current
IGSS
VGS = 30 V, VDS = 0
10
nA
Gate-source cutoff voltage
VGSC
VDS = 10 V, ID = 10 A
5V
Forward transfer admittance
Y
fs
VDS
= 10 V, I
D
= 5 mA, f = 1 kHz
2.5
7.5
mS
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
6.5
pF
(Common source)
Reverse transfer capacitance
Crss
1.9
pF
(Common source)
Noise figure
NF
VDS = 10 V, VGS = 0, f = 100 Hz
2.5
dB
Rg = 100 k
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
IDSS (mA)
1.0 to 3.0
2.0 to 6.5
■ Package
Code
SSMini3-F3
Pin Name
1: Source
2: Drain
3: Gate
■ Marking Symbol: 2B
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2595 | RF POWER, FET |
| 2SK2595 | RF POWER, FET |
| 2SK2596 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2596 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2598(2-10S1B) | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2593GQL | 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK2593JQL | 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK2593P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 1MA I(DSS) | SC-75A |
| 2SK2593Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 2MA I(DSS) | SC-75A |
| 2SK2593R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 5MA I(DSS) | SC-75A |
发布紧急采购，3分钟左右您将得到回复。