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参数资料
| 型号： | 2SK2605 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 412K |
| 代理商： | 2SK2605 |
2SK2605
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2605
Switching Regulator Applications
Low drainsource ON resistance
: RDS (ON) = 1.9 (typ.)
High forward transfer admittance : |Yfs| = 3.8 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 640 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
800
V
Draingate voltage (RGS = 20k )
VDGR
800
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
370
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2605(Q) | 制造商:Toshiba 功能描述:Nch 800V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N LOGIC TO-220 ISOLATED |
| 2SK2605 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N LOGIC TO-220 ISOL |
| 2SK2606 | 功能描述:MOSFET N-CH 800V 8A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2606(F) | 功能描述:MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2607 | 功能描述:MOSFET N-CH 800V 9A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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