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参数资料
| 型号： | 2SK2616TP-FA |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP-FA, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 113K |
| 代理商： | 2SK2616TP-FA |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN5620B
2SK2616
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1899TS (KOTO) TA-0835 No.5620–1/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
Package Dimensions
unit:mm
2083B
[2SK2616]
Features
Low ON-resistance.
Low Qg.
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit:mm
2092B
[2SK2616]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2623TP-FA | 1500 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2623TP-FA | 1500 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2623TP | 1500 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2665 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2670 | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2617ALS | 制造商:SANYO 功能描述:Nch 500V 1.2(15V)A 1.6@15V TO220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 5A TO220F |
| 2SK2618ALS | 制造商:SANYO 功能描述:MOSFET, N CH 500V 6.5A TO220F Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 6.5A TO220F 制造商:Sanyo 功能描述:Trans MOSFET N-CH 500V 6.5A 3-Pin(3+Tab) TO-220FI(LS) |
| 2SK2623-TL-E | 制造商:SANYO 功能描述:Nch 600V 1.5A 5.5@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 600V 1.5A TP-FA |
| 2SK2624ALS | 功能描述:MOSFET N-CH 600V 3.5A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2625ALS | 功能描述:MOSFET N-CH 600V 5A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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