- 您现在的位置：买卖IC网 > PDF目录55797 > 2SK2617ALS 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK2617ALS |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220FI(LS), 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 55K |
| 代理商： | 2SK2617ALS |
2SK2617ALS
No. A0361-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0361B
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
D0507 TI IM TC-00001045 / 22107 TI IM TC-00000527 / 72006QB MS IM TC-00000026
SANYO Semiconductors
DATA SHEET
2SK2617ALS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Low Qg.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
500
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
IDc*1
Limited only by maximum temperature
5
A
IDpack*2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
4.5
A
Drain Current (Pulse)
IDP
PW≤10s, duty cycle≤1%
16
A
Allowable Power Dissipation
PD
2.0
W
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single pulse) *4
EAS
88
mJ
Avalanche Current *5
IAV
4A
*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=4A
*5 L≤10mH, single pulse
Marking : K2617
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2624ALS | 3.5 A, 600 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2631TP-FA | 1000 mA, 800 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2631TP-FA | 1000 mA, 800 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2632LS | 2.5 A, 800 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2680LS | 6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2618ALS | 制造商:SANYO 功能描述:MOSFET, N CH 500V 6.5A TO220F Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 500V 6.5A TO220F 制造商:Sanyo 功能描述:Trans MOSFET N-CH 500V 6.5A 3-Pin(3+Tab) TO-220FI(LS) |
| 2SK2623-TL-E | 制造商:SANYO 功能描述:Nch 600V 1.5A 5.5@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 600V 1.5A TP-FA |
| 2SK2624ALS | 功能描述:MOSFET N-CH 600V 3.5A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2625ALS | 功能描述:MOSFET N-CH 600V 5A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2628ALS | 制造商:SANYO 功能描述:MOSFET,N CH,600V,7A,TO-220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH600V7ATO-220FI |
发布紧急采购，3分钟左右您将得到回复。