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参数资料
| 型号： | 2SK2623TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP-FA, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 49K |
| 代理商： | 2SK2623TL |
2SK2623
No.6148-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PD -- Ta
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
--
W
A S O
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
IDP=6A
Ciss
Coss
Crss
f= 1MHz
2
3
5
7
100
2
3
5
7
1000
10
05
10
15
20
25
30
2
3
5
7
0.1
0.01
2
3
5
7
1.0
2
3
5
7
10
23
5
7
10
1.0
100
23
5
7
23
5
7
1000
4
0
8
12
16
20
24
28
30
32
020
40
6080
120
100
140
160
0.2
0
0.4
0.6
0.8
1.0
1.2
020
40
6080
120
100
140
160
Operation in
this area is
limited by RDS(on).
IT12667
IT12668
IT12669
IT12670
No
heat
sink
DC
operation
10ms
100
s
1ms
ID=1.5A
Tc=25
°C
Single pulse
PD -- Tc
Case Temperature, Tc --
°C
PW
≤10
s
Drain
Current,
I
D
-
A
Allowable
Power
Dissipation,
P
D
-
W
Note on usage : Since the 2SK2623 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of June, 2007. Specifications and information herein are subject
to change without notice.
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相关代理商/技术参数 |
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| 2SK2623-TL-E | 制造商:SANYO 功能描述:Nch 600V 1.5A 5.5@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 600V 1.5A TP-FA |
| 2SK2624ALS | 功能描述:MOSFET N-CH 600V 3.5A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2625ALS | 功能描述:MOSFET N-CH 600V 5A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2628ALS | 制造商:SANYO 功能描述:MOSFET,N CH,600V,7A,TO-220FI Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH600V7ATO-220FI |
| 2SK2631-TL-E | 制造商:SANYO 功能描述:Nch 800V 1A 10@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 800V 1A TO251 制造商:Sanyo 功能描述:0 |
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