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参数资料
| 型号： | 2SK2678 |
| 元件分类： | JFETs |
| 英文描述： | 1.5 A, 600 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 封装： | TO-220FI, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 9K |
| 代理商： | 2SK2678 |
981224TM2fXHD
Absolute Maximum Ratings / Ta=25
°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
600
±30
1.5
6
20
150
--55 to +150
V
A
W
°C
Electrical Characteristics / Ta=25
°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
min
typ
max
unit
600
3.5
0.5
1.0
±100
5.5
1.2
V
mA
nA
V
S
pF
nC
ns
V
1.0
4.2
300
90
45
8
9
12
20
17
Switching Time Test Circuit
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA
, VGS=0
VDS=600V , VGS=0
VGS=
±30V , VDS=0
VDS=10V
, ID=1mA
VDS=10V
, ID=0.8A
ID=0.8A
, VGS=15V
VDS=20V
, f=1MHz
VDS=20V
, f=1MHz
VDS=20V
, f=1MHz
VDS=200V , ID=1.5A
VGS=10V
See Specified Test
Circuit
IS=1.5A
, VGS=0
TENTATIVE
unit
Features and Applications
Low ON-state resistance.
Low Qg.
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
Specifications and information herein are subject to change without notice.
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
(Tc=25
°C)
50
P.G
2SK2678
S
G
D
VOUT
VDD=200V
ID=0.8A
RL=250
PW=1
S
D.C.
≤0.5%
VGS=15V
RGS
2SK2678
Package Dimensions
TO-220FI(LS) (unit:mm)
16.0
14.0
7.2
1.2
0.9
3.6
0.75
16.1
0.7
2.4
0.6
1.2
2.55
12 3
10.0
4.5
2.8
φ 3.2
3.5
1 : Gate
2 : Drain
3 : Source
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2679 | 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2684(L) | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2684(S) | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2684(S) | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2684(S) | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2679(Q) | 制造商:Toshiba 功能描述:Nch 400V 5.5A 1.2@10V TO220NIS 制造商:Toshiba 功能描述:Nch 400V 5.5A 1.2@10V TO220NIS Bulk |
| 2SK2679(Q,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2679T | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 400V 5.5A 3PIN SC-67 - Rail/Tube |
| 2SK2682 | 制造商:Distributed By MCM 功能描述:1Ch 250W 13A 35W Gds Sanyo Fet Transistor TO-220Ab |
| 2SK2687-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/ |
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