参数资料
型号: 2SK2679
元件分类: JFETs
英文描述: 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件页数: 6/6页
文件大小: 392K
代理商: 2SK2679
Data Sheet D16737EJ1V0DS
4
2SK3811
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
100
200
300
400
500
0
0.2
0.4
0.6
0.8
1
VGS = 10 V
Pulsed
VDS - Drain to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0.001
0.01
0.1
1
10
100
1000
123456
VDS = 10 V
Pulsed
TA = 150°C
75°C
25°C
55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
T
ransfer
Admittan
ce
-
S
1
10
100
1000
1
10
100
1000
VDS = 10 V
Pulsed
TA = 150°C
75°C
25°C
55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
0.4
0.8
1.2
1.6
2.0
2.4
1
10
100
1000
VGS = 10 V
Pulsed
ID - Drain Current - A
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
1
2
3
4
5
6
02468
10 12 14 16 18 20
Pulsed
ID = 110 A
55 A
22 A
VGS - Gate to Source Voltage - V
相关PDF资料
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相关代理商/技术参数
参数描述
2SK2679(Q) 制造商:Toshiba 功能描述:Nch 400V 5.5A 1.2@10V TO220NIS 制造商:Toshiba 功能描述:Nch 400V 5.5A 1.2@10V TO220NIS Bulk
2SK2679(Q,T) 制造商:Toshiba America Electronic Components 功能描述:
2SK2679T 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 400V 5.5A 3PIN SC-67 - Rail/Tube
2SK2682 制造商:Distributed By MCM 功能描述:1Ch 250W 13A 35W Gds Sanyo Fet Transistor TO-220Ab
2SK2687-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/