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参数资料
| 型号： | 2SK2684(S) |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 48K |
| 代理商： | 2SK2684(S) |
2SK2684(L), 2SK2684(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
——V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 30 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—2028m
I
D = 15A, VGS = 10V*
1
resistance
R
DS(on)
—3550m
I
D = 15A, VGS = 4V*
1
Forward transfer admittance
|y
fs|12
18
—
S
I
D = 15A, VDS = 10V*
1
Input capacitance
Ciss
—
750
—
pF
V
DS = 10V
Output capacitance
Coss
—
520
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
210
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
16
—
ns
V
GS = 10V, ID = 15A
Rise time
t
r
—
260
—
ns
R
L = 0.67
Turn-off delay time
t
d(off)
—85—
ns
Fall time
t
f
—90—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 30A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
45
—
ns
I
F = 30A, VGS = 0
diF/ dt = 50A/
s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2687-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/ |
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| 2SK2690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5 Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ |
| 2SK2690-01SC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2691-01RSC | 制造商:Fuji Electric 功能描述: |
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