参数资料
型号: 2SK2684L
厂商: Hitachi,Ltd.
英文描述: Silicon N Channel DV-L MOS FET(N沟道 DV-L MOSFET)
中文描述: 硅?频道的DV -蜇场效应晶体管(不适用沟道的DV -蜇MOSFET)的
文件页数: 4/10页
文件大小: 68K
代理商: 2SK2684L
2SK2684(L), 2SK2684(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
500
200
100
20
50
10
2
1
5
0.5
0.1
0.3
1
3
10
30
100
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
2
4
6
8
10
3.5 V
4 V
5 V
10 V
6 V
V = 3 V
4.5 V
Tc = 75
°
C
25
°
C
–25
°
C
Ta = 25
°
C
100
s
1ms
PW=10m 1ho)
DCOpeaion(T =25
°
C
10
μ
s
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
Pulse Test
V = 10 V
Pulse Test
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相关代理商/技术参数
参数描述
2SK2687-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/
2SK2689-01MRSC-P 制造商:Fuji Electric 功能描述:
2SK2690-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5 Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/
2SK2690-01SC-P 制造商:Fuji Electric 功能描述:
2SK2691-01RSC 制造商:Fuji Electric 功能描述: