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参数资料
| 型号： | 2SK2726-E |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 500 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 190K |
| 代理商： | 2SK2726-E |
2SK2726
Rev.4.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Drain Current
40
30
20
10
0
50
100
150
200
13
10
30
100
300
1000
10
8
6
4
2
0
24
68
10
8
6
4
2
0
10
20
30
40
50
100
30
10
3
0.3
0.1
0.03
0.01
1
PW
=
10
ms
(1shot)
Ta = 25
°C
10
s
100
s
1 ms
DC
Operation
(Tc
=
25
°C)
VGS = 4 V
6 V
5 V
4.5 V
10 V
Tc = 75
°C
25
°C
–25
°C
GS
Operation in
this area is
limited by RDS(on)
Pulse Test
VDS = 10 V
Pulse Test
20
16
12
8
4
0
48
12
16
20
0.1
1
10
0.2
5
0.1
2
5
1
0.5
2
0.5
20
ID = 7 A
5 A
2 A
0.2
VGS = 10, 15 V
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2727(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2730-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box |
| 2SK2731T146 | 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2733(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220 |
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