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参数资料
| 型号： | 2SK2749 |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 411K |
| 代理商： | 2SK2749 |
2SK2749
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2749
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 1.6 (typ.)
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
7
Drain current
Pulse (Note 1)
IDP
21
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
682
mJ
Avalanche current
IAR
7
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.5 mH, IAR = 7 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2777(2-10S1B) | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2786-11-C | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2789(TO-220FL) | 27 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2789(TO-220SM) | 27 A, 100 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2792 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2749(F) | 制造商:Toshiba 功能描述:Nch 900V 7A 2@10V TO3P(N) Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PN |
| 2SK2749(F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 7A 3PIN 2-16C1C - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 7A TO-3PN |
| 2SK2750 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 3.5A 3PIN TO-220(NIS) - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2750(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 3.5A 3-Pin(3+Tab) TO-220NIS |
| 2SK275100L | 功能描述:JFET N-CH 40V 10MA MINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
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