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参数资料
| 型号： | 2SK2765 |
| 厂商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | N沟道场效应管 |
| 文件页数： | 2/2页 |
| 文件大小： | 328K |
| 代理商： | 2SK2765 |
N-channel MOS-FET
800V
2
> Characteristics
2SK2765-01
FAP-IIS Series
7A
125W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=3,5A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test;V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=80V; I
AV
=7A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
E
↑
I
F
7
8
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe operation area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
P
D
10
↑
I
D
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
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PDF描述 |
|---|---|
| 2SK2765-01 | N-channel MOS-FET |
| 2SK2766-01R | N-channel MOS-FET |
| 2SK2767-01 | N-channel MOS-FET |
| 2SK2768-01L | N-channel MOS-FET |
| 2SK2768-01S | N-channel MOS-FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2765-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.62 Ohms;ID +/-7A;TO-3P;PD 125W;VGS +/-35V |
| 2SK2765-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK2766-01RSC | 制造商:Fuji Electric 功能描述: |
| 2SK2767-01SC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2769-01MR | 制造商:Fuji Electric 功能描述: |
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