- 您现在的位置：买卖IC网 > PDF目录371549 > 2SK2768-01S (FUJI ELECTRIC CO LTD) N-channel MOS-FET PDF资料下载
参数资料
| 型号： | 2SK2768-01S |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TPACK-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 380K |
| 代理商： | 2SK2768-01S |
N-channel MOS-FET
900V
5,5
> Characteristics
2SK2768-01L,S
FAP-IIS Series
3,5A
80W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source-On-State Resistance vs. T
ch
R
DS(on)
= f(I
D
); 80 μs pulse test; T
C
= 25°C
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; VDS=25V; Tch=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; V
DS
=25V; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
C
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=90V; I
AV
=3,5A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
E
↑
I
F
7
8
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe operation area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
P
D
10
↑
I
D
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2769-01MR | N-channel MOS-FET |
| 2SK2770-01 | N-channel MOS-FET |
| 2SK2771-01R | Power MOSFET |
| 2SK2776 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK2777 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2769-01MR | 制造商:Fuji Electric 功能描述: |
| 2SK2771-01R-F123R | 制造商:FUJI_ELEC 功能描述: |
| 2SK2776(Q) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2776(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2776-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
发布紧急采购，3分钟左右您将得到回复。