| 型号: | 2SK2772 |
| 英文描述: | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述: | 晶体管| MOSFET的| N沟道| 235V五(巴西)直| 4A条(丁)|律师- 63 |
| 文件页数: | 1/10页 |
| 文件大小: | 490K |
| 代理商: | 2SK2772 |

相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2787LS | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2790 | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK2794 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2807-01 | |
| 2SK2885(L) | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2776(Q) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2776(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2776-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2777(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FL 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO220FL |
| 2SK2777(SM,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO220SM |