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参数资料
| 型号： | 2SK2795 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | RF SMALL SIGNAL, FET |
| 封装： | SC-62, UPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 43K |
| 代理商： | 2SK2795 |
2SK2795
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
10
V
Gate to source voltage
VGSS
±6
V
Drain current
ID
0.17
A
Drain peak current
ID(pulse)*
1
0.3
A
Channel dissipation
Pch*
2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
≤ 10ms, duty cycle ≤ 50 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltege drain
current
IDSS
—
10
A
VDS = 10 V, VGS = 0
Gate to source leak current
IGSS
—
±5.0
A
VGS = ±6V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.3
—
1.0
V
ID = 1mA, VDS = 5V
Input capacitance
Ciss
—
9.5
—
pF
VGS = 2V, VDS = 0
f = 1MHz
Output capacitance
Coss
—
4.5
—
pF
VDS = 5, VGS = 0
f = 1MHz
Output Power
Pout
24
—
dBm
VDS = 4.7V
f = 836.5MHz
Pin = 13dBm
Drain Rational
ηD
40
—
%
VDS = 4.7V
f = 836.5MHz
Pin = 13dBm
Note:
1. Marking is “ DX “.
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相关代理商/技术参数 |
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|---|---|
| 2SK2796-L(E) | 制造商:Renesas Electronics 功能描述:60V 5A DPAK-3 制造商:Renesas Electronics 功能描述:60V 5A DPAK-3 Bulk |
| 2SK2796L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:N-channel MOSFET, 60V,5A,0.12ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) |
| 2SK2796S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2796S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(2+Tab) DPAK(S) |
| 2SK2796STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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