参数资料
型号: 2SK2796(S)
元件分类: JFETs
英文描述: 0.25 ohm, POWER, FET
封装: DPAK-3
文件页数: 6/12页
文件大小: 60K
代理商: 2SK2796(S)
2SK2796(L), 2SK2796(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
60
——V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
——10
AV
DS = 60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state
resistance
R
DS(on)
0.12
0.16
I
D = 3 A, VGS = 10V
Note4
Static drain to source on state
resistance
R
DS(on)
0.16
0.25
I
D = 3A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
2.5
4.0
S
I
D = 3A, VDS = 10V
Note4
Input capacitance
Ciss
180
pF
V
DS = 10V
Output capacitance
Coss
90
pF
V
GS = 0
Reverse transfer capacitance
Crss
30
pF
f = 1MHz
Turn-on delay time
t
d(on)
—9
—ns
V
GS = 10V, ID = 3A
Rise time
t
r
25
ns
R
L = 10
Turn-off delay time
t
d(off)
—35
ns
Fall time
t
f
—55
ns
Body–drain diode forward voltage
V
DF
1.0
V
I
F = 5A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
40
ns
I
F = 5A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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