参数资料
型号: 2SK2796L
元件分类: JFETs
英文描述: 0.25 ohm, POWER, FET
文件页数: 1/5页
文件大小: 34K
代理商: 2SK2796L
2SK2796L, 2SK2796S
Silicon N Channel MOS FET
High Speed Power Switching
Target Specification 1st. Edition
October 1996
Features
Low on-resistance
RDS(on) = 0.12
typ.
4V gate drive devices.
High speed switching
Outline
1 2
3
4
1 2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK
1
2
3
D
G
S
相关PDF资料
PDF描述
2SK2800-E 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2801 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2824 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2832-01R 50 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2835 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK2796-L(E) 制造商:Renesas Electronics 功能描述:60V 5A DPAK-3 制造商:Renesas Electronics 功能描述:60V 5A DPAK-3 Bulk
2SK2796L-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:N-channel MOSFET, 60V,5A,0.12ohm,DPAK-L 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1)
2SK2796S(TL-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2796S-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 5A 3-Pin(2+Tab) DPAK(S)
2SK2796STL-E 制造商:Renesas Electronics Corporation 功能描述: