参数资料
型号: 2SK2796S
元件分类: JFETs
英文描述: 5 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 8/10页
文件大小: 76K
代理商: 2SK2796S
Data Sheet D12357EJ3V0DS
5
2SK2983
1.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
ISD
-
Diode
Forward
Current
-
A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.1
0
50
10
0
50
100
150
ID = 15 A
10
0.1
100
1000
10000
1
10
100
10
100
1000
1
10
100
V
GS
-
Gate
to
Source
Voltage
-
V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Diode Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/
s
VGS = 0 V
1
0.1
10
1
10
100
VDD = 15 V
VGS = 10 V
RG = 10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
30
40
10
20
30
40
20
40
30
Ciss
Coss
Crss
VDD = 24 V
15 V
6 V
VDS
tf
1000
100
ID = 30 A
VGS
10 V
0
1.5
tr
td(on)
td(off)
VSD - Source to Drain Voltage - V
0.5
Pulsed
VGS = 0 V
VGS = 4.5 V
0.1
1
100
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VGS = 0 V
f = 1 MHz
2
4
6
8
10
12
14
相关PDF资料
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2SK2797 2000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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