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参数资料
| 型号： | 2SK2844 |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, 2-10P1B, SC-46, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 426K |
| 代理商： | 2SK2844 |
2SK2844
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2844
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 16 m (typ.)
High forward transfer admittance
: |Yfs| = 26 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 30 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
30
V
Draingate voltage (RGS = 20 k)
VDGR
30
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
35
A
Drain current
Pulse (Note 1)
IDP
140
A
Drain power dissipation (Tc = 25°C)
PD
60
W
Single pulse avalanche energy
(Note 2)
EAS
259
mJ
Avalanche current
IAR
35
A
Repetitive avalanche energy (Note 3)
EAR
6
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.08
°C / W
Thermal resistance, channel to ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 152 μH, RG = 25 , IAR = 35 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2844(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-220 |
| 2SK2845 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 1A 3PIN DP - Bulk |
| 2SK2845(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(2+Tab) Case DP |
| 2SK2845(TE16L1,Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson 9 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2846(TP,Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin TPS T/R |
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