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参数资料
| 型号： | 2SK2851 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 48K |
| 代理商： | 2SK2851 |
2SK2851
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—
0.055
0.07
I
D = 2.5A, VGS = 10V*
1
resistance
R
DS(on)
—
0.07
0.1
I
D = 2.5A, VGS = 4V*
1
Forward transfer admittance
|y
fs|5
7
—
S
I
D = 2.5A, VDS = 10V*
1
Input capacitance
Ciss
—
500
—
pF
V
DS = 10V
Output capacitance
Coss
—
260
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
110
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = 10V, ID = 2.5A
Rise time
t
r
—
30
—
ns
R
L = 12
Turn-off delay time
t
d(off)
—
100
—
ns
Fall time
t
f
—75—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
D = 5A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
50
—
ns
I
F = 5A, VGS = 0
diF/ dt = 50A/
s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2854(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET RF N CH 10V 500MA |
| 2SK2857-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2857-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2857-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
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