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参数资料
| 型号： | 2SK2884(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220FL, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 787K |
| 代理商： | 2SK2884(2-10S1B) |
2SK2884
2006-11-10
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2884
Chopper Regulator, DCDC Converter Applications
Low drainsource ON resistance
: RDS (ON) = 1.9 (typ.)
High forward transfer admittance
: |Yfs| = 3.8 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 640 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
800
V
Draingate voltage (RGS = 20 k)
VDGR
800
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
370
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 27 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2884(2-10S2B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(TO-220FL) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2886 | 45 A, 50 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2889(2-10S2B) | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2889(2-10S1B) | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2884-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2886(F) | 制造商:Toshiba 功能描述:Nch 50V 45A 0.02@10V TO220NIS Bulk |
| 2SK2887TL | 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2889(Q) | 制造商:Toshiba 功能描述:Nch 600V 10A 0.75@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 10A TO220FL |
| 2SK2889-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
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