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参数资料
| 型号： | 2SK2910 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CP, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 198K |
| 代理商： | 2SK2910 |
2SK2910
No.6153–3/4
SW Time - I D
P D - Ta
VDD=15V
VGS=10V
2
3
5
7
2
3
5
7
72
3
2
3
57
Ciss,Coss,Crss - VDS
VGS - Qg
f= 1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
2
3
5
7
VDS=10V
ID=0.8A
10
1.0
100
1000
10
5
015
202530
1.0
2.03.0
4.05.0
0.5
1.5
2.5
3.5
4.5
0
1
2
3
4
5
6
7
8
9
10
1.0
100
td(on)
t r
td(off)
tf
20
60
40
80
120
100
140
160
0
0.04
0.08
0.12
0.16
0.20
0.24
0.25
0.28
1.0
0.1
Switching
Time,
SW
Time
–
n
s
Drain Current, ID –A
Drain
Current
,I
D
–A
Drain-to-Source Voltage, VDS –V
Allowable
Power
Dissipation,
P
D
–W
Ambient Temperature, Ta – C
Ciss,
Coss,
Crss
–
p
F
Gate-to-Source
Voltage,
V
GS
–
V
Drain-to-Source Voltage, VDS –V
Total Gate Charge, Qg – nC
VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
I F - VSD
0
Ta=
-
25
°C
25
°C
75
°C
0.01
0.1
1.0
10
0.2
0.4
0.6
1.0
0.8
1.2
1.4
0
Forward
Current,
I F
–A
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
–m
Diode Forward Voltage, VSD –V
Ambient Temperature, Ta – C
R DS(on) - Ta
ID=0.4A,V
GS
=10V
I D
=0.4A,V
GS
=4V
200
0
400
020
-20
-40
-60
40
60
80
100
120
160
140
600
100
300
500
A S O
IDP=3.2A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
23
5
72
3
5 7
23
5 7
23
10ms
1ms
100
s
ID=0.8A
DC
operation
0.01
0.001
0.1
1.0
0.1
1.0
10
0.01
Ta=25
°C
Single pulse
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2912L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2912S(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2914 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube |
| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
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