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参数资料
| 型号： | 2SK2914 |
| 元件分类： | JFETs |
| 英文描述： | 7.5 A, 250 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | 2-10P1B, SC-46, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 397K |
| 代理商： | 2SK2914 |
2SK2914
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2914
Chopper Regulator, DCDC Converter and Moter Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.42 (typ.)
High forward transfer admittance
: |Yfs| = 7.5 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 250 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
7.5
Drain current
Pulse (Note 1)
IDP
30
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
110
mJ
Avalanche current
IAR
7.5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
–55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.3 mH, RG = 25 , IAR = 7.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SK291 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291R | SMALL SIGNAL, FET, TO-92 |
| 2SK291Q | SMALL SIGNAL, FET, TO-92 |
| 2SK291-S | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291-R | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
| 2SK2915 | 功能描述:MOSFET N-CH 600V 16A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2915(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3PN Bulk |
| 2SK2915(Q,T) | 功能描述:MOSFET MOSFET N-Ch 600V 16A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2916 | 功能描述:MOSFET N-CH 500V 14A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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